http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-970030452-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate | 1995-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1997-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-970030452-A |
| titleOfInvention | Etching Method of Interlayer Insulating Film Composed of Oxide and Nitride |
| abstract | The present invention is formed on a silicon substrate, a high-density plasma in the etching equipment interlayer insulating film composed of an oxide film and nitride film are conducted in the chamber of one of the nitride film on the interlayer insulating film was added to O 2 gas to the C 2 F 6, reaction Etching with a gas, and etching the oxide film with at least one reaction gas among C 2 F 6 , C 3 F 8 , and C 4 F 8 in the interlayer insulating film. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100296137-B1 |
| priorityDate | 1995-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 15.