http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-970028843-A
Outgoing Links
| Predicate | Object |
|---|---|
| filingDate | 1995-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1997-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-970028843-A |
| titleOfInvention | Base resin for chemically amplified resist and its manufacturing method |
| abstract | The present invention relates to a base resin for chemically amplified resists and a method for producing the same. As shown below, the copolymer prepared according to the method of the present invention is excellent in etching resistance in which a crown-ether group is substituted in the side chain. It is transparent at 193 nm because there is no double bond. Therefore, the copolymer of the present invention can be used in the lithography process using the wavelength (193 nm) of the ArF excimer laser newly used according to the high integration of the semiconductor chip. |
| priorityDate | 1995-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.