http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-970028841-A
Outgoing Links
| Predicate | Object |
|---|---|
| filingDate | 1995-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1997-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-970028841-A |
| titleOfInvention | Base resin for chemically amplified resist and its manufacturing method |
| abstract | The present invention relates to a base resin for chemically amplified resists and a method for manufacturing the same. As shown below, a copolymer in which a ketal group is substituted with a side chain group in the method of the present invention is not only excellent in etching resistance but also transparent at 193 nm. Do. Therefore, the copolymer of the present invention can be used in the lithography process using the wavelength (193 nm) of the ArF excimer laser newly used according to the high integration of the semiconductor chip. |
| priorityDate | 1995-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.