http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-970024411-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-209 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-955 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-32316 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2231 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-209 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-32316 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-223 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 |
| filingDate | 1996-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1997-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-970024411-A |
| titleOfInvention | Method for manufacturing semiconductor laser and semiconductor laser (SEMICONDUCTOR LASER AND METHOD OF FABRICATING SEMICONDUCTOR LASER) |
| abstract | The method for manufacturing a semiconductor laser includes a lower cladding layer 2 of a first conductivity type made of a semiconductor material having an effective band gap energy on the surface of the first conductive type semiconductor substrate 1, and a corresponding lower clad layer 2 The active layer 3 made of a semiconductor material having an effective bandgap energy smaller than the effective bandgap energy of the? The first upper cladding layer 4 of the second conductivity type having a high etching rate, the second conductivity type etching stopper layer 5 made of a semiconductor material having a relatively low etching rate by the etchant, and the second The second upper cladding layer 6 of the second conductive type made of the same semiconductor material as the first upper cladding layer 4 of the conductive type and the first contact layer 7 of the second conductive type made of the semiconductor material are sequentially formed. Epitaxial growth The step of; Forming a stripe-shaped mask (8) extending in the reverse mesa direction on the first conductive layer (7) of the second conductivity type to provide a stripe-shaped ridge structure having a reverse mesa section; Part of the first contact layer 7 and the second upper clad layer 6 by first wet etching until the etching stopper layer 5 is exposed using the stripe mask 8. Forming a stripe-shaped support structure having a reverse mesa section (9); Growing a first block type current block layer 12 in contact with both sides of the corresponding ridge structure 19; After the mask 8 is removed, the second contact layer of the second conductivity type made of the same material as the first contact layer 7 on the current block layer 12 and the first contact layer 7 ( 13) a step of growing.n n n In this method, the lower part of the ridge structure in which the ridge width becomes wider in the active layer 3 group is selectively etched with respect to the etching stopper layer 5 by the second wet etching, so that the ridge side surface and the etching stopper layer ( The angle between the surface of 5) is an acute angle.n n n As a result, a stripe-type ridge structure having a complete inverted mesa section having the narrowest ridge width at the lower portion of the ridge close to the active layer 3 is obtained. |
| priorityDate | 1995-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.