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filingDate 1995-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 1997-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-970018238-A
titleOfInvention Metal layer formation method
abstract The present invention relates to a method for forming a metal layer on a silicon substrate, a first step of forming an insulating layer on a silicon substrate, a second step of forming a seed layer on the insulating layer, and a photo on the seed layer A third step of forming a photosensitive layer by applying a resist, a fourth step of patterning the photosensitive layer into a predetermined shape, and a fifth step of forming a metal layer on the seed layer exposed through the pattern of the photosensitive layer; And a sixth step of forming a protective layer on the metal layer, a seventh step of exposing the seed layer by removing a photosensitive layer remaining on the seed layer, and removing the exposed seed layer and the protective layer. It consists of eight steps, thereby preventing the metal layer from being damaged when the seed layer is removed, thereby forming a metal layer having a desired pattern size and line width.
priorityDate 1995-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 31.