http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-970018055-A
Outgoing Links
| Predicate | Object |
|---|---|
| filingDate | 1995-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1997-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-970018055-A |
| titleOfInvention | Manufacturing Method of Semiconductor Device |
| abstract | The present invention relates to a method of forming a contact hole in a semiconductor device capable of minimizing a phenomenon in which an etching process is stopped before a contact hole is formed and a damage of a critical area due to erosion of a photosensitive film when forming a contact hole having a high aspect ratio.n n n A method of manufacturing a semiconductor device of the present invention includes etching an intermediate film by forming an insulating film on a semiconductor substrate, forming an intermediate film on the insulating film, forming a photosensitive film on the insulating film, and performing a primary etching process. And then partially etching the insulating film, removing the remaining insulating film, etching the remaining insulating film by performing a secondary etching process, and forming a contact hole by etching the remaining interlayer film. . |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040022627-A |
| priorityDate | 1995-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 11.