http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-970017840-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2201-319 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2329-00 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J9-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J9-025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J1-30 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J9-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J17-49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J1-304 |
| filingDate | 1995-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1997-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-970017840-A |
| titleOfInvention | Field emission array (FEA) incorporating MOSFET and its manufacturing method |
| abstract | As the MOSFET, which is a driving element for driving a conventional FEA, is electrically connected, it is difficult not only to lower the driving voltage but also to secure uniformity between pixels, and to improve the manufacturing cost of the FED due to an additional process by electrical coupling. In the present invention, the silicon nitride film is selectively implemented by simultaneously implementing FEA and MOSFET on the same substrate, that is, simultaneously implementing two devices using a common process in the manufacturing process of Si-FEA, metal FEA and MOSFET. Etching to form an active region of the field emission tip and the MOSFET and simultaneously forming a gate insulating film and a field oxide film of the FEA by the LOCOS process, so that the gate and row electrodes of the FEA are electrically connected to the MOSFET, respectively. MOSFET is manufactured integrally so that the FEA and MOSFET can be simultaneously implemented together. A service to be applied directly to produce the future, the display module and the driving circuit integrally with FEA. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100288549-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100300193-B1 |
| priorityDate | 1995-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.