patent/KR-970013070-A

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-970013070-A

Outgoing Links

Predicate	Object
classificationCPCAdditional	http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
classificationCPCInventive	http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76828 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02348 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
classificationIPCInventive	http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
filingDate	1996-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate	1997-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	KR-970013070-A
titleOfInvention	Semiconductor device and manufacturing method thereof
abstract	The present invention relates to a method of forming an interlayer insulating film between metal wirings, metal interconnection lines or above, and a planarizing method. It is an object of the present invention to provide a method of forming an interlayer insulating film of a semiconductor device, A silicon oxide film is formed so as to cover the first wiring formed on the substrate with the silicon oxide film interposed therebetween. Then, a thick film SOG film is coated on the silicon oxide film and heat treatment is applied to the silicon oxide film , A silicon oxide film is formed, a through-hole is formed by a predetermined mask, and a heat treatment is performed. With this configuration, it is possible to provide a semiconductor device with high reliability by preventing corrosion of the formed wiring.
isCitedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100459686-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100460803-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100413044-B1
priorityDate	1995-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type	http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate	Subject
isDiscussedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419556970 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID947 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24261 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID458392451 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457707758

Total number of triples: 32.