http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-970003510-A
Outgoing Links
| Predicate | Object |
|---|---|
| filingDate | 1995-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1997-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-970003510-A |
| titleOfInvention | Contact hole formation method of semiconductor device |
| abstract | The present invention relates to a method for forming a contact hole in a semiconductor device, and sequentially depositing a nitride film, a polysilicon, and an oxide film on a semiconductor substrate, and then forming a contact mask on the entire upper portion, using the contact mask using the contact mask. When etching the oxide layer below it to form a film, the oxide film is inclined etched using a gas in which a large amount of polymer is generated, or the temperature of the electrode on which the wafer is mounted during etching is uniformly adjusted at a constant temperature. Contact holes having the following fine size can be easily formed. |
| priorityDate | 1995-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 12.