http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-960702610-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N24-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3122 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-122 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1212 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76819 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D183-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N24-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D5-25 |
| filingDate | 1994-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1996-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-960702610-A |
| titleOfInvention | METHODS OF EVALUATING SILOXANE USED FOR FORMING INSULATION COATING, COATING FLUID USED FOR FORMING-INSULATION COATING, PROCESS FOR PRODUCING THE FLUID, PROCESS FOR FORMING INSULATION COATING FOR SEMICONDUCTOR DEVICE, AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE BY APPLYING THE ABOVE PROCESS) |
| abstract | The present invention evaluates the siloxanes for forming the insulating film based on the content ratio of the organic substituent bonded to the Si atom in the organic SOG and the abundance ratio of the Si atoms having different numbers of the organic substituents. Further, in the present invention, based on this evaluation result, a dope solution containing siloxanes having an abundance ratio of SiC atoms having one Si-C bond of 80% or more, or a composition formula (CH 3 ) y SiO 2.2 / y A fine groove is formed by forming an insulating film for a semiconductor device, in particular an interlayer insulating film, by using a coating liquid containing a methyl siloxane oligomer having an irregular structure with a weight average molecular weight of 1500 to 6000 with a weight average molecular weight of 1500 to 6000. It is possible to obtain an insulating film having excellent film properties, such as electrical properties such as stiffness, flatness of the entire base pattern, thick coating property for step filling, and insulation.n n n Therefore, in this invention, the semiconductor device which has an insulating film excellent in the film | membrane characteristic like this can be manufactured. In addition, in this invention, the above-mentioned coating liquid can be obtained by using the raw material which adjusted the quantity of the organic substituent group couple | bonded with Si atom to 80-130% of all Si atoms using the alkoxy silane, the alkyl alkoxy silane, etc. have. |
| priorityDate | 1994-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 91.