http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-960035962-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02183 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-763 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31055 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 1995-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1996-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-960035962-A |
| titleOfInvention | Device Separator Formation Method |
| abstract | The present invention provides a semiconductor substrate comprising: forming a trench in a predetermined device isolation region; Forming a Ta X O Y film along a top surface of the semiconductor substrate at a predetermined thickness; Forming a dielectric film over the entire structure to completely fill the trench; A fourth step of flattening etching until the surface of the semiconductor substrate other than the inside of the trench is exposed; And forming a first oxide film by a thermal oxidation process, wherein the insulating effect is improved by forming a device isolation film employing a Ta X O Y film to improve device characteristics and yield direction. Has the effect of bringing. |
| priorityDate | 1995-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.