http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-960026638-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76819 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 1994-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1996-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-960026638-A |
| titleOfInvention | Manufacturing Method of Semiconductor Device |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a manufacturing process of a semiconductor device, and more particularly, to a manufacturing process of a semiconductor device which prevents deformation of the device due to a failure of an interlayer insulating layer during a metal wiring process. Conventionally, a metal oxide (PEOS) -based plasma enhanced (PEOS) -based oxide film (PEOS) is used for metal wiring and then a passivation protective layer, such as SOG, is applied to remove the photoresist to form a thermal process or via hole. When a large amount of water is released and the moisture is adsorbed to the hydrophilic SOG layer, the device easily penetrates into the TEOS-based PE oxide film composed of loosely high-energy hydrogen ions, thereby deforming the threshold voltage of the device. This lowers the reliability of the device. Therefore, the present invention forms a metal interconnection film, and then laminates the interlayer insulator from the PE oxide film based on the xylene gas, the SOG film, and the PE oxide film based on the TEOS, thereby removing the moisture and the passivation layer generated from the SOG film. It is possible to prevent the penetration of the emitted hot carrier to prevent the deformation of the threshold voltage of the device, and to improve the contact resistance to improve the electrical characteristics and reliability. |
| priorityDate | 1994-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.