http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-960026167-A
Outgoing Links
| Predicate | Object |
|---|---|
| filingDate | 1994-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1996-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-960026167-A |
| titleOfInvention | Contact method of semiconductor device |
| abstract | According to an aspect of the present invention, there is provided a method of contacting a semiconductor device, the method comprising: forming a predetermined layer or a pattern including an active region (2) in a semiconductor substrate (1), and then forming a contact hole in a predetermined site; Sequentially forming a diffusion barrier layer (4, 5), titanium oxynitride layer (6) on the entire structure; Forming a first conductive layer 7 on the entire structure, and then etching the plane; And forming a second conductive layer 8 on the entire structure, to improve the step coverage characteristics and to improve the characteristics and yield of the entire device. will be. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100607656-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100484253-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990025483-A |
| priorityDate | 1994-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.