http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-960019669-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76895 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 1995-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1996-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-960019669-A |
| titleOfInvention | Formation of Local Wiring |
| abstract | At a low temperature at which cobalt silicide does not aggregate, a cobalt silicide layer 9a is formed on the upper surfaces of the gate electrodes 7a and 7b and the surfaces of the n + impurity diffusion layers 5a and 5b. Then, the local wiring 10 is formed on the cobalt silicide layer 9a.n n n After the local wiring 10 is formed, a high temperature heat treatment of about 800 ° C. or more is performed on the cobalt silicide layer 9a. As a result, it is possible to form local wiring without giving etching damage to the substrate. |
| priorityDate | 1994-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.