| abstract |
An object of the present invention is to provide a highly reliable semiconductor device. A plurality of semiconductor elements are bonded to at least one electrode pattern of an insulating substrate having a plurality of electrode patterns formed on a main surface thereof, and electrodes of the semiconductor elements are electrically connected to the electrode patterns, respectively, so that the other side of the insulating period is a heat dissipation base. A semiconductor device having a terminal bonded to the heat dissipation base and covering the semiconductor element with a subsidiary to further block the semiconductor element from an external atmosphere, and electrically connecting an electrode provided on the insulating substrate to an electrode provided outside the subtracting subsidiary. In the heat dissipation base material, the coefficient of linear expansion of the semiconductor element is at least three times the coefficient of linear expansion of the semiconductor element, the thermal conductivity is 100W / mK or more, the semiconductor element is at least one electrode on the main surface of the insulating substrate On the surface, it is arrange | positioned separately by at least 2 area | regions by another electrode surface. |