| abstract |
The top layer 1104 of a single crystal silicon substrate 1102 having a plane (100), including portions made of single crystals and having complex structures, is irradiated with neon atomic currents from a plurality of prescribed directions. Thus, the orientation of the crystal orientation 111 surface of the top layer 1104 is changed upward.n n n Masking portion 106 acts as a protective portion to anisotropically etch the substrate from the bottom surface, thereby forming V-groove 1112.n n n At this time, the top layer 1104 acts as a nicking stop layer.n n n It is therefore possible to easily manufacture micromachines having a single crystal diaphragm having a uniform thickness.n n n As shown in the figure, a micromachine having a complicated part made of a single crystal material can be easily manufactured without bonding. |