http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-950015602-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0073 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-564 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-56 |
| filingDate | 1994-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1995-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-950015602-A |
| titleOfInvention | Manufacturing Method of Semiconductor Device |
| abstract | The present invention aims at continuously supplying a semiconductor substrate into a vacuum chamber and forming an ohmic and low resistance contact portion on the semiconductor substrate, wherein the target chamber 2 made of titanium is disposed in the vacuum chamber 1. After supplying the argon gas and depositing the titanium film 5 on the silicon substrate 3, the argon gas in which nitrogen was mixed into the vacuum chamber 1 was supplied to the titanium nitride film 6 on the titin film 5. And argon gas is again supplied into the vacuum tamver (2) to remove nitrogen adhering to the surface of the target (2) and at the same time depositing a mixed layer (9) of titanium and nitrogen on the titanium nitride film (6). It is characterized by that. |
| priorityDate | 1993-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.