http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-950014365-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3346 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32623 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1884 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32678 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32688 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32706 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 |
| filingDate | 1994-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1995-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-950014365-A |
| titleOfInvention | Method and apparatus for etching thin layers, in particular indium-tin-oxide layers |
| abstract | Plasma source 12 disposed on the vacuum chamber 2 and the substrate support 5 facing the vacuum chamber 2 and the high frequency source connected to the substrate support 5 in the glass chamber 2 in the vacuum chamber 2. Cl 2 or Cl 2 and H 2 or CG 4 can be introduced into the vacuum chamber 2 as an etching gas in an apparatus for etching a thin layer of phase, in particular an indium-tin-oxide layer, and a high frequency into the substrate support 5. The generator 8 can be adjusted regardless of the etch particle density and the plasma source 12 is supplied with a high frequency from a separate high frequency source 16 having its own matching circuit 17. |
| priorityDate | 1993-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.