http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-950009951-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76819 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 |
| filingDate | 1994-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1995-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-950009951-A |
| titleOfInvention | Manufacturing method of semiconductor integrated circuit device |
| abstract | In order to form an insulating film layer having a flat surface on the wirings of the underlying wiring layer subjected to the CVD method and the stutter etching method, which simultaneously form the silicon oxide film on the wiring, the silicon oxide film 20a is larger than the wiring width 1. A semiconductor integrated circuit device for forming a spin on glass (SOG) film on the surface of the silicon oxide 20a having a small size of each of the protrusions, and then etching back at least a part of the SOG film to complete the insulating film layer with a flat surface. Manufacturing method. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100650711-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100971906-B1 |
| priorityDate | 1993-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.