http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-940022914-A
Outgoing Links
| Predicate | Object |
|---|---|
| filingDate | 1994-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1994-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-940022914-A |
| titleOfInvention | Semiconductor device manufacturing method |
| abstract | In thin film transistors having an active layer of crystalline silicon suitable for mass production, catalytic elements are introduced into the doped portions of the amorphous silicon film by ion implantation or other methods. This film crystallizes at a temperature below the strain point of the glass substrate. In addition, a gate insulating film and a gate electrode are manufactured. Impurities are introduced in a self-aligned method. Next, the laminate is annealed below the strain point of the substrate to activate the dopant impurities. Meanwhile, nickel or another element is applied to contact the surface of the amorphous silicon film. The film is heated to 450 to 650 ° C. to produce crystal nuclei. The film is heated at a higher temperature to grow crystal grains. In this way, a crystalline silicon film having improved crystallinity is produced. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6589822-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100393955-B1 |
| priorityDate | 1993-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 59.