http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-940022720-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4412 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-507 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-507 |
| filingDate | 1994-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1994-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-940022720-A |
| titleOfInvention | Plasma processing equipment |
| abstract | A processing vessel in which the inside is maintained at a predetermined vacuum, plasma generating means installed on an upper surface of the processing vessel and transmitting a high frequency therein to generate plasma in a process gas inside the processing vessel, and the action of the plasma generating means. A semiconductor wafer plasma processing apparatus comprising a holder for holding a semiconductor wafer subjected to a predetermined process generated from the process gas, wherein the supply means for processing the process gas is equally spaced in the circumferential direction of the processing container at four intervals. The first gas supply pipe provided in the place and the first gas supply pipe provided in the center of the upper surface of the processing container, and the gas exhaust means from the processing container are provided in four places at equal intervals in the circumferential direction of the processing container. As a result, the plasma density in the central portion of the processing container is not lowered, thereby obtaining a uniform and high-density plasma, and processing a large diameter semiconductor wafer at a uniform and high speed. In another plasma processing apparatus, helicon and plasma generating means are provided on the side of the processing container so as to generate helicon and plasma from the process gas in a flat plate-shaped region spaced apart from the semiconductor wafer on the holding apparatus. The helicon and plasma generating means comprise a loop antenna for transmitting electromagnetic waves parallel to the holding device, and a rectangular coil for forming a helical magnetic field and plasma from electromagnetic waves by forming a rectangular magnetic field in the same direction as the electromagnetic waves. As a result, the entire surface of the large-diameter semiconductor wafer can be uniformly processed at high speed. |
| priorityDate | 1993-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419556224 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID2244 |
Total number of triples: 14.