http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-940015705-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26 |
| filingDate | 1992-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1994-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-940015705-A |
| titleOfInvention | Metal wiring formation method of semiconductor device |
| abstract | The present invention relates to a method for forming a metal wiring of a semiconductor device to remove the polymer film of the metal wiring sidewalls formed during the etching of the metal wiring to completely suppress the corrosion of the metal wiring, to improve the electrical properties of the metal wiring and to increase the reliability of the device. The present invention relates to a method for forming a metal wiring in a semiconductor device in which a CF 4 plasma treatment in a first step and a CF 4 / O 2 plasma treatment are performed in a second step to remove a polymer film on a metal wiring sidewall. |
| priorityDate | 1992-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541 |
Total number of triples: 12.