http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-940007893-A

Outgoing Links

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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-84
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C8-18
filingDate 1993-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 1994-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-940007893-A
titleOfInvention Semiconductor memory device with address transition detector that quickly enables redundancy decoder
abstract The built-in plurality of transition detection subunits 28A / 28B of the semiconductor memory device monitor the address bits, and the plurality of charging transistors Qp13 / Qp14 coupled in parallel between the power voltage line Vcc and the decoding line 27e. Charges the decoding line to a precharged level so that the decoding circuit 270d can quickly determine whether the stored address matches the address represented by the address bits to replace the combined column of the regular memory cell with the column of the redundant memory cell. It is gated by the output signal of the address transition detection circuit.
priorityDate 1992-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID19909
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457559389

Total number of triples: 19.