http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-930022549-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-65 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24917 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-75 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-008 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G4-012 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G4-008 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B1-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G4-232 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G4-10 |
| filingDate | 1993-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1993-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-930022549-A |
| titleOfInvention | Electrical connections to dielectric material |
| abstract | The main structure of the present invention includes electrical connections made to dielectric materials (eg strontium titanate 22) and dielectrics (eg ruthenium nitrides 20 and 24). The connection is made of a compound which is electrically conductive containing nonmetals (ie, metal compounds with one or more nonmetals), such as ruthenium nitride, ruthenium dioxide, tin nitride, tin oxide, titanium nitride and titanium monoxide. Advantages of such a structure include reducing the contamination between the dielectric material and the dielectric by acting as a diffusion barrier for the metal compound. Further reaction is minimized by the reacted metal to prevent interlayer separation of the connecting material. Since the connection is a single layer, it can be more easily and economically produced in a manufacturing environment. Suspension resistance caused by nonconductive interconnect oxides is largely prevented by these structures. |
| priorityDate | 1992-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 53.