http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-930020609-A
Outgoing Links
| Predicate | Object |
|---|---|
| filingDate | 1993-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1993-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-930020609-A |
| titleOfInvention | Method and apparatus for manufacturing insulating film of semiconductor device |
| abstract | A method of manufacturing an insulating film of a semiconductor device by chemical vapor deposition, the surface of the semiconductor wafer is treated with an organic compound such as ethanol and methanol, then transported the semiconductor wafer to the reaction chamber and chemical vapor deposition using a raw material gas such as an organic silicon compound Thereby depositing an insulating film on the processed substrate of the semiconductor wafer.n n n By treating the surface of the semiconductor wafer with an organic compound before deposition, the planarization and filling capability of the insulating film is improved. Moreover, the formed insulating film is very small in amount of water contained in the insulating film regardless of space and cracks. The surface treatment of the semiconductor wafer is simply performed by spin coating, spraying, vapor deposition or dipping, thus improving the yield. In addition, the gas of the organic compound for treating the surface of the semiconductor wafer may be mixed with the source gas and the reaction gas in the reaction chamber. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20030002625-A |
| priorityDate | 1992-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.