http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-930020592-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-302 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| filingDate | 1993-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1993-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-930020592-A |
| titleOfInvention | Etching Method of Polyside Film |
| abstract | A reaction gas containing at least one of HBr gas, Br₂ gas and BBr₃ gas activated by plasma discharge, and an etching resistant film made of an inorganic compound while the temperature of the base material is maintained at 60 ° C or higher. The present invention provides a method of dry etching a two-layer film formed of a polycrystalline silicon film and a metal silicide film formed on a base material. In this way, it is possible to improve the controllability and the selectivity of etching without using prone gas, and furthermore, to make the shape after etching of the etching material irrespective of the ratio of the area of the area where the etching resistant film is formed with respect to the exposed area of the etching material. It is possible. |
| priorityDate | 1992-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.