| abstract |
The present invention provides a semiconductor device and a manufacturing method thereof. The semiconductor device includes a group III nitride device having a plurality of hole channels and a group III nitride device having a plurality of electron channels. Here, the group III nitride element of the hole channel and the group III nitride element of the electron channel are disposed correspondingly. The Group III nitride element of the electron channel has a fin-type channel, and can simultaneously form a 2D hole gas and/or a 2D electron gas at an interface between the compound semiconductor layer and the nitride semiconductor layer. The present invention is an energy-saving normally off electron and/or hole channel with a simple process, low cost, high channel density per unit area, and high performance such as high withstand voltage, high power, and low on-resistance. A group III nitride transistor is provided. |