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filingDate 2021-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2022-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20220139336-A
titleOfInvention Integrated device comprising a distributed feedback (DFB) laser on silicon and a DFB laser on silicon
abstract a substrate comprising a first surface and a second surface, the substrate comprising silicon; a plurality of shallow trench isolations (STIs) positioned over the second surface of the substrate; a grating region positioned over the plurality of STIs and the substrate, the grating region comprising a III-V semiconductor material; an unintentional doping (NID) region located above the grating region; and a distributed feedback (DFB) laser comprising a contact region located above the NID region.
priorityDate 2020-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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