http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20220117302-A

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filingDate 2020-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_725cf320f4cf65b2aab8707f64623813
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publicationDate 2022-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20220117302-A
titleOfInvention light emitting diode precursor
abstract A method of forming a light emitting diode (LED) precursor is provided. The method includes forming an LED stack comprising a plurality of group-III nitride layers on a substrate, the LED stack comprising an LED stack surface formed on an opposite side of the LED stack relative to the substrate, and a first surface of the LED stack surface. masking the portion leaving a second portion of the surface of the LED stack exposed. The LED stack in which a second portion of the LED stack below the second portion of the LED stack surface has a resistance that is relatively higher than the resistance of each group-III nitride layer in a first region of the LED stack below the first portion of the LED stack surface. A second portion of the surface of the LED stack is subjected to a poisoning process to include at least one of the group-III nitride layers of
priorityDate 2019-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 46.