http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20220107149-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_31565373c08678b1a7e68d5a1e4c5878 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06N10-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N60-805 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06N10-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01P7-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06N10-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N60-855 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N60-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N69-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G06N10-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G06N10-40 |
| filingDate | 2021-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_72aed80178a80ea0fa0d8f89839aeb6b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b7bd0a52c5f83990cd77c86dab1838cd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_757ad36f6698bafc7ba1275df2c6b2aa http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5ab810619fa299aa6d15533f9d5096ce http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_40b9c91513a593c64058217ba240d339 |
| publicationDate | 2022-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20220107149-A |
| titleOfInvention | Superconducting quantum hybrid systems, computer devices, and quantum chips |
| abstract | The present application provides a superconducting quantum hybrid system, a computer device, and a quantum chip, and relates to the field of quantum computing. A superconducting quantum hybrid system comprises: a silicon carbide (SiC) epitaxial layer and a line of superconducting qubits, wherein the lines of superconducting qubits correspond to superconducting qubits; the designated area of the SiC epitaxial layer includes a nitrogen vacancy (NV) center, the NV center being formed by implanting nitrogen ions into the SiC epitaxial layer at the designated area; Superconducting qubit lines are located on the surface of the SiC epitaxial layer; Superconducting qubit lines are coupled to solid-state defect qubits. By ion implantation, the solution can help control the coupling between solid-state defect qubits and superconducting qubits by precisely controlling the positions and number of NV centers formed. In this way, a superconducting qubit with a short coherence time can store information in a solid-state defect qubit with a long coherence time, increasing the decoherence time of the information, and A significant number of computing operations are easier to achieve. |
| priorityDate | 2021-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.