| abstract |
An object of the present invention is to provide a cleaning liquid for semiconductor substrates subjected to chemical mechanical polishing, which is excellent in cleaning performance and corrosion prevention performance for a metal film containing copper and a metal film containing cobalt. Another object of the present invention is to provide a method for cleaning a semiconductor substrate subjected to chemical mechanical polishing. The cleaning liquid of the present invention is a cleaning liquid for semiconductor substrates subjected to chemical mechanical polishing, and is a component A, which is an amino acid having one carboxyl group, and a component B, which is at least one selected from the group consisting of aminopolycarboxylic acids and polyphosphonic acids. and component C (however, component A, aminopolycarboxylic acid and quaternary ammonium compound are excluded) which is an aliphatic amine, and the mass ratio of the content of component B to the content of component A is 0.2 to 10, Mass ratio of content of component C with respect to the sum of content of component A and content of component B is 5-100. |