| abstract |
The light sources include the p-type semiconductor layers 1242; 1244; 1246, the n-type semiconductor layers 1212; 1214; 1216, and the p-type semiconductor layers 1242; 1244; 1246 and the n-type semiconductor 1212; 1214; 1216. and an active region between the layers and configured to emit light. The active region includes a plurality of barrier layers 1232 ; 1234 ; 1236 and one or more quantum well layers 1222 ; 1224 ; 1226 . The plurality of barrier layers 1232 ; 1234 ; 1236 of the active region includes at least one n-doped barrier layer comprising an n-type dopant. The active region is characterized by a lateral linear dimension of about 10 μm or less. The n-type dopant includes, for example, silicon, selenium, or tellurium. |