| abstract |
The disclosed technology relates generally to forming a titanium nitride layer, and more specifically to forming a titanium nitride layer on a seed layer by atomic layer deposition. In one aspect, a semiconductor structure comprises a semiconductor substrate comprising a non-metallic surface. The semiconductor structure further comprises a seed layer comprising silicon (Si) and nitrogen (N) conformally coating the non-metallic surface and a TiN layer conformally coating the seed layer. Aspects also relate to methods of forming semiconductor structures. |