| abstract |
The present invention relates to a directional self-assembly lithography method, the method comprising the step of depositing a block copolymer film on a layer (20) neutral to the block copolymer, the block copolymer film as a lithographic mask for use, the method characterized in that it comprises the steps of: - depositing the neutral layer (20) on the surface of the substrate (10), wherein the neutral layer (20) is carbon or fluoro- depositing the neutral layer, which is of carbon type; - crosslinking said neutral layer, - depositing said block copolymer film comprising at least one silylation block on said crosslinked neutral layer (30); - subjecting the stack to an assembly temperature to nanostructure the block copolymer; - among the nano-domains 41 , 42 from the nanostructured block copolymer film 40 to produce a pattern intended to be transferred by etching (G2, G3, G4) to the thickness of the substrate 10 . removing (G1) at least one. |