| abstract |
The disclosed technology relates generally to forming titanium nitride-based thin films, and more particularly to conformal smooth titanium nitride-based thin films and methods of forming the same. In one aspect, a method of forming a thin film comprising one or both of TiSiN or TiAlN comprises exposing a semiconductor substrate to one or more vapor deposition cycles at a pressure of a reaction chamber greater than 1 Torr, wherein the plurality of A single vapor deposition cycle includes exposure to a titanium (Ti) precursor, exposure to a nitrogen (N) precursor, and exposure to one or both of a silicon (Si) precursor or an aluminum (Al) precursor. |