| abstract |
The present invention relates to a novel Group 14 organometallic compound, a composition for depositing a Group 14 metal-containing thin film comprising the same, and a method for manufacturing a Group 14 metal-containing thin film and a Group 14 metal oxide thin film using the same, Group organometallic compounds are highly volatile, have excellent vapor pressure, do not decompose even at high temperatures, and can form a Group 14 metal oxide thin film through atomic layer deposition in a wide temperature range, making it easy to manufacture high-purity thin films with a simple process can do. In addition, according to the present invention, it is possible to provide a thin film containing a Group 14 metal having a uniform surface even for a semiconductor device having a high aspect ratio by realizing a high step coverage. |