http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20220027285-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1054 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2013-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 |
| publicationDate | 2022-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20220027285-A |
| titleOfInvention | Semiconductor device |
| abstract | A transistor including an oxide semiconductor layer may have stable electrical properties. In addition, a highly reliable semiconductor device including such a transistor is provided. A semiconductor device includes a multilayer film including an oxide layer and an oxide semiconductor layer, a gate insulating film in contact with the multilayer film, and a gate electrode overlapping the multilayer film with the gate insulating film interposed therebetween. In the semiconductor device, the oxide semiconductor layer contains indium, the oxide semiconductor layer is in contact with the oxide layer, the oxide layer contains indium, and has an energy gap larger than that of the oxide semiconductor layer. |
| priorityDate | 2012-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 59.