| abstract |
A semiconductor device having low power consumption and strong resistance to high temperatures is provided. A semiconductor device having a first circuit, a second circuit, a first circuit, a second cell, a first wiring, and a second wiring. The first cell has a first transistor and the second cell has a second transistor. Also, the first transistor and the second transistor operate in the subthreshold region. The first cell is electrically connected to the first circuit through the first wiring, the first cell is electrically connected to the second circuit through the second wiring, and the second cell is electrically connected to the second circuit through the second wiring. is connected to The first cell programs the current flowing through the first transistor as the first current, and the second cell programs the current flowing through the second transistor as the second current. At this time, a potential corresponding to the second current is input to the first cell from the second wiring. Next, by passing a third current from the second circuit and changing the potential of the second wiring, the first cell outputs the fourth current corresponding to the amount of change in the potential and the first current. |