| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31055 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 |
| filingDate |
2021-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94be8f33a08a7d929105c7490f68a3c6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b4db559d926eab3f3c1f82a951777eb2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_60400f5cb82e9dc56c30b3cea5fc8dd5 |
| publicationDate |
2022-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20220020775-A |
| titleOfInvention |
Etching method and plasma processing system |
| abstract |
In the etching process of the object to which the etching object layer and the mask layer formed in advance are formed on the surface, the surface morphology of the object to be processed is improved, and consumption of the mask layer in the said etching process is suppressed. A method of etching an object to be treated with an etching target layer and a mask layer formed on the surface of the etching target layer and formed above the etching target layer, comprising the steps of: (a) etching the etching target layer using the mask layer as a mask; ( b) covering the surface of the object to be treated with a deposit; and (c) etching the surface of the object to be treated covered with the deposit to planarize the surface. |
| priorityDate |
2020-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |