http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20220010308-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f517051dd4d265e5e931724f45b34ddc |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76841 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45534 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2020-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d6cb902bd1824c97dc299adb694925ff http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97115381fe31035746c5fdeb52c07938 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_162add8bdd56935f64d39a6db3b4142a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db4b5cb018d52410b734e9c23095c424 |
| publicationDate | 2022-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20220010308-A |
| titleOfInvention | Growth inhibitor for forming thin film, method for forming thin film and semiconductor substrate prepared therefrom |
| abstract | The present invention relates to a growth inhibitor for thin film formation, a thin film formation method using the same, and a semiconductor substrate prepared therefrom, and more particularly, to the following Chemical Formula 1 [Formula 1] AnBmXoYiZj (A is carbon or silicon; B is hydrogen or an alkyl having 1 to 10 carbon atoms unsubstituted or substituted with halogen; X is fluorine (F), chlorine (Cl), bromine (Br) and iodine at least one of (I); wherein Y and Z are independently at least one selected from the group consisting of oxygen, nitrogen, sulfur and fluorine and are not the same as each other; wherein n is an integer from 0 to 15; wherein o is an integer greater than or equal to 1; m is 0 to 2n+1; wherein i and j are independently integers from 0 to 3) and to a semiconductor substrate manufactured therefrom. According to the present invention, by suppressing side reactions to reduce the growth rate of the thin film and to remove process by-products in the thin film, even when forming a thin film on a substrate having a complex structure, step coverage and thickness uniformity of the thin film are greatly improved It is effective to provide a growth inhibitor for thin film formation, a thin film formation method using the same, and a semiconductor substrate manufactured therefrom. |
| priorityDate | 2020-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 104.