| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0922
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823857
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 |
| filingDate |
2020-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_acb0d6720d661c380cb0ee15371f070c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9eab38b57698396a2c20f288ab6e6472
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79e077e15951d3571b54f17907a1a24b |
| publicationDate |
2021-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20210156985-A |
| titleOfInvention |
Semiconductor devices including work function layers |
| abstract |
The semiconductor device includes first and second transistors on a substrate. The first transistor may include a first N-type active region; a first gate electrode having a first work function layer; and a first gate dielectric layer having High-K Dielectrics containing La. The first work function layer includes a first layer with TiON, a second layer with TiN or TiON, a third layer with TiON, a fourth layer with TiN, and a fifth layer with TiAlC. The second transistor includes a first P-type active region; a second gate electrode having a second work function layer; and a second gate dielectric layer having a high-k dielectric. The second work function layer includes the fifth layer in direct contact with the second gate dielectric layer. |
| priorityDate |
2020-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |