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publicationDate 2021-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20210151229-A
titleOfInvention Atomic Layer Etching for Subtractive Metal Etching
abstract A method of atomic layer etching a metal-containing layer is provided. At least a region of the surface of the metal-containing layer is modified to form a modified metal-containing region by exposing the surface of the metal-containing layer to a modifying gas, and an unmodified metal-containing region remains adjacent the modified metal-containing region. . The modified metal-containing regions are selectively removed relative to the unmodified metal-containing regions by exposing the surface of the metal-containing layer to an inert bombardment plasma generated from an inert gas.
priorityDate 2019-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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