| abstract |
An insulating film capable of suppressing diffusion of hydrogen into an oxide semiconductor film in a transistor using an oxide semiconductor is provided. Another object of the present invention is to provide a semiconductor device having good electrical characteristics using a transistor using a silicon semiconductor and a transistor using an oxide semiconductor. Two nitride insulating films having different functions are formed between a transistor using a silicon semiconductor and a transistor using an oxide semiconductor. Specifically, a first insulating nitride film containing hydrogen is formed on a transistor using a silicon semiconductor, and between the first insulating film and the transistor using an oxide semiconductor, the hydrogen content is lower than that of the first insulating film, and a barrier to hydrogen A second insulating nitride film serving as a film is formed. |