http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210139156-A
Outgoing Links
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|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3343 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3341 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32146 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32568 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32174 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32155 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 |
| filingDate | 2021-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20210139156-A |
| titleOfInvention | Plasma processing apparatus and plasma processing method |
| abstract | [Problem] The processing performance of plasma etching is improved by suppressing shape abnormalities caused by etching. [Solutions] The plasma processing apparatus includes a plasma processing chamber, a substrate support, a source RF generator, and a bias DC generator. A substrate support is disposed within the plasma processing chamber and includes a lower electrode. The source RF generator is configured to generate a source RF signal for generating plasma in the plasma processing chamber, wherein the source RF signal alternately includes a high state and a low state. The bias DC generator is connected to the lower electrode and is configured to generate a bias DC signal, wherein the bias DC signal alternately includes an on state and an off state, and the period of the on state includes a period of a high state of the source RF signal. , wherein the period of the off state corresponds to a period of the low state of the source RF signal, each on state comprising a plurality of cycles, each cycle comprising: a first sequence of first pulses and a second sequence of pulses; a second sequence, wherein the first pulse has a first voltage level and the second pulse has a second voltage level different from the first voltage level. |
| priorityDate | 2020-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419546198 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6373 |
Total number of triples: 25.