| abstract |
Embodiments of the present disclosure generally provide methods of forming a hybrid film stack that can be used as a capacitor layer or gate insulating layer with high dielectric constant as well as film qualities for display applications. In one embodiment, the thin film transistor structure includes gate, source, and drain electrodes formed on a substrate; and an insulating layer formed on the substrate, wherein the insulating layer is a hybrid film stack having a dielectric layer comprising a zirconium-containing material disposed on an interfacial layer formed above or below the gate, source, and drain electrodes. |