| abstract |
A semiconductor device is provided. The semiconductor device includes a first active pattern extending in a first direction, a second active pattern extending in the first direction and spaced apart from the first active pattern in the first direction, extending in the first direction, the second active pattern and A third active pattern spaced apart in a first direction, extending in a first direction, a fourth active pattern spaced apart from the first active pattern in a second direction, extending in a first direction, and extending in a first direction with the fourth active pattern A fifth active pattern spaced apart, a sixth active pattern extending in the first direction and spaced apart from the fifth active pattern in the first direction, and a field insulating layer between the first active pattern and the second active pattern, the top surface of the field insulating layer being a first gate structure formed on the upper surface of the first active pattern and a field insulating film lower than the upper surface of the second active pattern, the field insulating film and the first active pattern, extending in the second direction and intersecting the fourth active pattern; a second gate structure formed on the second active pattern and extending in the second direction to intersect the fifth active pattern, between the second active pattern and the third active pattern, and between the fifth active pattern and the sixth active pattern a first device isolation layer filling the first isolation trench extending in the second direction, and a second device isolation layer filling the second isolation trench extending in the second direction between the first gate structure and the second gate structure; The lowermost surface of the first isolation trench is higher than the lowermost surface of the second isolation trench. |