http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210123064-A

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filingDate 2020-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_80463416fb07c0de9d3a9bc0a5426c7d
publicationDate 2021-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20210123064-A
titleOfInvention Method of manufacturing a iii-nitride semiconducter device
abstract The present disclosure provides a method for manufacturing a group III nitride semiconductor device, the method comprising: growing a group III nitride semiconductor structure having a channel layer and a barrier layer on a growth substrate; attaching a temporary substrate through a metal bonding layer to a side of the group III nitride semiconductor structure opposite to the growth substrate; removing the growth substrate; bonding the heat dissipation substrate to the group III nitride semiconductor structure on the side from which the growth substrate is removed; And, it relates to a method of manufacturing a group III nitride semiconductor device comprising the step of removing the temporary substrate.
priorityDate 2020-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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