abstract |
The present invention relates to a silicon nitride film etching composition, and more specifically, by including a silicon-based compound including a cyano group in the etching composition, the silicon nitride film can be stably etched with a high selectivity compared to the silicon oxide film, and deposits that adversely affect device properties The present invention relates to an etching composition for a silicon nitride film that does not cause problems such as generation and abnormal growth of a silicon oxide film, a method for etching a silicon nitride film using the same, and a method for manufacturing a semiconductor device. |