| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6f932d94618d9b875e401457b33e9761 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30608 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-06 |
| filingDate |
2020-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a90f524b7cba98d6eb6d2ed8011bee19
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f31c42d51eae9bdcc9ce2881af5c882
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1afcf45cb3c6d676c08b74d94c486990
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_85754ac2cc16979ad8752c6bf77f96cf |
| publicationDate |
2021-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20210119164-A |
| titleOfInvention |
A crystalline silicon ethant compositon, and a pattern formation method |
| abstract |
The present invention includes (A) a quaternary ammonium hydroxide, (B) a quaternary ammonium salt represented by a specific chemical structure, and (C) water, thereby etching crystalline silicon to form a pattern by etching at a fast etch rate. The present invention relates to a crystalline silicon etchant composition capable of improving the roughness of a surface by remarkably reducing the size of a facet of the etched surface by etching a target, and a pattern forming method using the same. |
| priorityDate |
2020-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |