| abstract |
A method of manufacturing a semiconductor device includes placing a first semiconductor die over a substrate and placing a beam homogenizer over the first semiconductor die. A beam of the beam homogenizer is irradiated to the first semiconductor die. The method also determines a position offset of the beam relative to the first semiconductor die in the plurality of pixels using a first calibration equation to convert the number of pixels to a distance in mm, and to align the beam with the first semiconductor die. and moving the beam homogenizer by a distance in mm. |